1N4448WT Overview
Description
1N4448WT Marking Code A3 VR Reverse Voltage 75 VRRM VRMS Peak Reverse Voltage RMS Voltage 100 50 VDC IF(AV) Maximum DC Blocking Voltage Maximum Average Forward Current 75 150 IFSM PD RthJA TJ, TSTG Peak Forward Surge Current, t=1.0µS Total Power Dissipation Derate above 25 °C 4 200 625 -55 to +150 TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Unit Conditions V V V V mA TA=25 °C A mW ° C/W °C Rev. B/AH Page 1 of 5 Two Terminals SMD Switching Diode 1N4448WT Symbol Description VF Maximum Forward Voltage IR Maximum DC Reverse Current at Rated DC Blocking Voltage, TJ=25 °C CT Maximum Total Capacitance Trr Maximum Reverse Recovery Time 1N4448WT 0.72 1.00 2.5 4 4 Unit Conditions IF=5mA V IF=100mA µA VR=75V pF VR=0V, f=1MHz ns IF=10mA, IR=1mA, VR=6V, RL=100Ω Typical Characteristics Curves Fig.1- Power Derating Curve Fig.2- Typical Forward Characteristics Power Dissipation, PD (mW) Forward Current, IF (mA) Ambient Temperature TA (°C) Forward Voltage, VF (V) Rev.
Key Features
- Fast switching speed
- Electrically identical to standard JEDEC
- High conductance
- Surface mount package ideally suited for automatic insertion
