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2N6383

Manufacturer: Taitron Components

2N6383 datasheet by Taitron Components.

2N6383 datasheet preview

2N6383 Datasheet Details

Part number 2N6383
Datasheet 2N6383-TAITRON.pdf
File Size 335.98 KB
Manufacturer Taitron Components
Description Darlington Power Transistor
2N6383 page 2 2N6383 page 3

2N6383 Overview

(800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage Min.

2N6383 Key Features

  • High Gain Dalington Performance
  • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
  • True plementary Specifications
  • RoHS pliant
  • Collector-Emitter Sustaining Voltage
  • Collector-Emitter Saturation Voltage VBE(on)
  • Base-Emitter On Voltage
  • hfe Small Signal Current Gain Cob Output Capacitance
  • Pulse Test: Pulse Width =300µs, Duty Cycle ≤2%
  • 1.0 1.0 1.0 0.3 3.0 0.3 3.0 0.3 3.0 10 20000

2N6383 from other manufacturers

View 2N6383 datasheet index

Brand Logo Part Number Description Other Manufacturers
Microsemi Corporation Logo 2N6383 NPN DARLINGTON POWER SILICON TRANSISTOR Microsemi Corporation
VPT Logo 2N6383 NPN Silicon Power Darlington Transistor VPT
SavantIC Logo 2N6383 (2N6383 - 2N6385) Silicon Power Transistor SavantIC
Central Semiconductor Logo 2N6383 NPN Transistor Central Semiconductor
Taitron Components logo - Manufacturer

More Datasheets from Taitron Components

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