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2SD669XD - SMD Power Transistor

General Description

Value VCEO Collector-Emitter Voltage 2SD669XD 2SD669AXD 120 160 VEBO IC ICP PD TJ, TSTG Emitter-Base Voltage Collector Current Continuous Collector Current Peak Power Dissipation at TC=25°C Operating and Storage Junction Temperature Range 5 1.5 3 2 -40 to +150 TAITRON COMPONENTS INCORPORATE

Key Features

  • Designed for general purpose power.

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Datasheet Details

Part number 2SD669XD
Manufacturer TAITRON
File Size 582.34 KB
Description SMD Power Transistor
Datasheet download datasheet 2SD669XD Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Power Transistor (NPN) 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value VCEO Collector-Emitter Voltage 2SD669XD 2SD669AXD 120 160 VEBO IC ICP PD TJ, TSTG Emitter-Base Voltage Collector Current Continuous Collector Current Peak Power Dissipation at TC=25°C Operating and Storage Junction Temperature Range 5 1.5 3 2 -40 to +150 TAITRON COMPONENTS INCORPORATED www.taitroncomponents.