BAV99 Overview
Representative BAV99 image (package may vary by manufacturer)
Description
BAV99 Unit Conditions Marking Code A7 VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width=1.0μs Pulse Width=1.0s 70 215 2.0 1.0 V mA Average over any 20ms period A Power Dissipation FR-5 Board at TA=25°C Derate above 25°C PD Power Dissipation Alumina Substrate at TA=25°C Derate above 25°C 225 mW Note 1 1.8 mW/°C 300 mW Note 2 2.4 mW/°C RthJA TJ, TSTG Operating Junction and Storage Temperature Range 556 417 -55 to +150 °C/W °C/W °C Note 1 Note 2 TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. B/AH Page 1 of 5 Three Terminals SMD Switching Diode BAV99 Note: 1: FR-5=1.0X0.75X0.062” 2: Alumina=0.4x0.3x0.024”, 99.5% alumina Symbol Description Min.
Key Features
- Silicon Epitaxial Planar Diode
- Low Current Leakage
- Low Forward Voltage
- Fast Switching Dual Diode with Common Cathode
