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BC817-16 - SMD General Purpose Transistor

General Description

Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C 55

Key Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.

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Datasheet Details

Part number BC817-16
Manufacturer TAITRON
File Size 257.56 KB
Description SMD General Purpose Transistor
Datasheet download datasheet BC817-16 Datasheet

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Other Datasheets by TAITRON

Part Number Description
BC817-25 SMD General Purpose Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Marking Information BC817-16 BC17-25 BC817-40 Marking Code 6A 6B 6C SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.