Download BC817-25 Datasheet PDF
BC817-25 page 2
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BC817-25 Description

Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation , Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above.

BC817-25 Key Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier