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BC817-40 - SMD General Purpose Transistor

Download the BC817-40 datasheet PDF. This datasheet also covers the BC817-16 variant, as both devices belong to the same smd general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C 55

Key Features

  • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC817-16-TAITRON.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC817-40
Manufacturer TAITRON
File Size 257.56 KB
Description SMD General Purpose Transistor
Datasheet download datasheet BC817-40 Datasheet

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Other Datasheets by TAITRON

Part Number Description
BC817-16 SMD General Purpose Transistor
BC817-25 SMD General Purpose Transistor
BC846 SMD General Purpose Transistor
BC846A SMD General Purpose Transistor
BC846B SMD General Purpose Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Marking Information BC817-16 BC17-25 BC817-40 Marking Code 6A 6B 6C SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.