Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range BC846 BC847 BC848 Unit Conditions 80 50 30 V 65 45 30 V 665 V 100 mA 350 mW Note 1 150 ° C -55 to +150 °C Note: 1.
| Part Number | Manufacturer | Description |
|---|---|---|
| BC848CDW1T1 | ETL | Dual General Purpose Transistors |
| BC848C | Galaxy Microelectronics | NPN Transistor |
| BC848CW | Infineon | NPN Silicon AF Transistors |
| BC848C | Infineon | NPN Silicon AF Transistors |
| BC848C | Fairchild Semiconductor | NPN EPITAXIAL SILICON TRANSISTOR |
| BC848C | onsemi | General Purpose Transistors |
| BC848C | Kexin Semiconductor | NPN Transistor |
| BC848CW | Diodes Incorporated | NPN SMALL SIGNAL TRANSISTOR |
| BC848CW | Diotec Semiconductor | SMD General Purpose NPN Transistors |
| BC848C | Rectron | NPN Transistor |
