BC858C
Description
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range BC856 BC857 BC858 Unit Conditions 80 50 30 V 65 45 30 V 555 V 100 mA 350 mW Note 1 150 ° C -55 to +150 °C Note: 1. Package mounted on 99.5% Alumina 10 x 8 x 0.6mm.
Key Features
- PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP)
