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BZT52C6V2-F - 410mW Two Terminals SMD Zener Diodes

This page provides the datasheet information for the BZT52C6V2-F, a member of the BZT52C2V4-F 410mW Two Terminals SMD Zener Diodes family.

Datasheet Summary

Description

Forward Voltage Drop Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction Temperature Storage Temperature Range Value 0.9 410 2.0 150 -55 to 150 Unit Conditions V IF=10mA mW Ta=25 °C (Note 1) A (Note 2) °C °C Not

Features

  • Planar Die Construction.
  • 410mW Power Dissipation.
  • Zener Voltage 2.4v to 51v.
  • RoHS Compliance Mechanical Data Case: SOD-123F, molded plastic Epoxy: Plastic package has UL flammability 94V-0 Terminals: Solderable per MIL-STD-202G,Method 208 Polarity: Color band denotes cathode Approx Weight: 0.01 grams SOD-123F Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VF Ptot IFSM TJ TSTG.

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Datasheet Details

Part number BZT52C6V2-F
Manufacturer TAITRON
File Size 208.18 KB
Description 410mW Two Terminals SMD Zener Diodes
Datasheet download datasheet BZT52C6V2-F Datasheet
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Full PDF Text Transcription

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410mW Two Terminals SMD Zener Diodes BZT52C2V4-F – BZT52C51-F 410mW Two Terminals SMD Zener Diodes Features • Planar Die Construction • 410mW Power Dissipation • Zener Voltage 2.4v to 51v • RoHS Compliance Mechanical Data Case: SOD-123F, molded plastic Epoxy: Plastic package has UL flammability 94V-0 Terminals: Solderable per MIL-STD-202G,Method 208 Polarity: Color band denotes cathode Approx Weight: 0.01 grams SOD-123F Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VF Ptot IFSM TJ TSTG Description Forward Voltage Drop Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction Temperature Storage Temperature Range Value 0.9 410 2.
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