BZX384C51 Description
Value Unit Conditions Ptot IFSM TJ Power Dissipation Peak Forward Surge Current,8.3ms single half sine-wave superimposed on rated load (JEDEC method) Operating Junction Temperature 200 2.0 150 mW Ta=25 °C (Note 1) A (Note 2) °C TSTG Storage Temperature Range -65 to 150 °C Rth(j-a) -Junction to Ambient in free air 650 °C/W Note: Mounted on 5.0mm²(0.13mm thick ) land areas 2. Measured on 8.3ms, single half sine-wave...
BZX384C51 Key Features
- Planar Die construction
- 200mW Power Dissipation
- Zener Voltage 3.9v to 75v
- Ideally Suited for Automated Assembly Processes
- RoHS pliance
- Ptot IFSM TJ
- 65 to 150
- Rth(j-a)
- BZX384C75