EGP10B Datasheet | Taitron Components

Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IFSM Peak Forward Surge Current EGP10A 50 35 50 EGP10B EGP10D EGP10G 100 200 400 70 140 280 100 200 400 1.0 30 EGP10J EGP10K 600 800 420 560 600 800 25 Unit Conditions V V V A 0.375” (9.5mm) lead length(Fig.1) 8.3ms single half sine-wave A superimposed on rated load (JEDEC Method) TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 1.0A Sintered Glass Passivated Super Fast Recovery Rectifier EGP10A - EGP10K Symbol VF IR Description Maximum Instantaneous Forward Voltage Maximum DC Reverse Current at Rated DC Blocking Voltage EGP10A Trr CJ RthJA Typical Reverse Recovery Time Typical Junction Capacitance Typical Thermal Resistance TJ TSTG Operating Temperature range Storage Temperature Range EGP10B 0.95 EGP10D EGP10G 1.25 5 30 50 35 17 50 -55 to +175 -55 to +175 EGP10J 1.70 EGP10K Unit Conditions 2.20 V IF=1.0 A TA=25° C µA TA=125°.