EGP30A
Description
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current IFSM Peak Forward Surge Current EGP30A 50 35 50 EGP30B EGP30D EGP30G 100 200 400 70 140 280 100 200 400 3.0 125 EGP30J EGP30K 600 800 420 560 600 800 115 Unit Conditions V V V A 0.375” (9.5mm) lead length(Fig.1) 8.3ms single half sine-wave A superimposed on rated load (JEDEC Method) TAITRON PONENTS INCORPORATED .taitronponents.
Key Features
- Sintered glass passivated (SGP) rectifier chip
- Low forward voltage, high current capability
- Low leakage current, high surge current capability
- High temperature soldering guaranteed: 260°C/10 seconds
- RoHS pliance
