Taitron Components IRFS634
250V/5.5A N-Channel Power MOSFET
GENERAL DESCRIPTION
● Low on resistance● Improved inductive ruggedness
● Fast switching time
● Rugged polysilicon gate cell structure
● Lower input capacitance
● Extended safe operating area
● Improved high temperature reliability TO-220F
FEATURES
● VDSS=250V, ID=5.5A● RDS(ON) ≤ 0.45 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 IRFS634 SAMSUNG
ABSOLUTE MAXIMUM RATINGS
SymbolDESCRIPTION
IRFS634 VDSS VDGR VGS ID ID IDM IGM EAS IAS Drain-Source Voltage (1) Drain-Gate Voltage (RGS =1.0MΩ) (1) Gate-Source Voltage Drain Current –Continuous Tc=25°C Drain Current –Continuous Tc=100°C Drain Current - Pulsed (2) Gate Current - Pulsed Single Pulsed Avalanche Energy (3) Avalanche Current 25