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IRFS634 - 250V/5.5A N-Channel Power MOSFET

General Description

Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220F

Key Features

  • VDSS=250V, ID=5.5A.
  • RDS(ON) ≤ 0.45 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F.

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Datasheet Details

Part number IRFS634
Manufacturer TAITRON
File Size 586.36 KB
Description 250V/5.5A N-Channel Power MOSFET
Datasheet download datasheet IRFS634 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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250V/5.5A N-Channel Power MOSFET (Discontinued) IRFS634 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability TO-220F Features  VDSS=250V, ID=5.5A  RDS(ON) ≤ 0.45 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 IRFS634 SAMSUNG Absolute Maximum Ratings Symbol Description IRFS634 VDSS VDGR VGS ID ID IDM IGM EAS IAS Drain-Source Voltage (1) Drain-Gate Voltage (RGS =1.