IRFS634
Description
- Low on resistance
- Improved inductive ruggedness
- Fast switching time
- Rugged polysilicon gate cell structure
- Lower input capacitance
- Extended safe operating area
- Improved high temperature reliability
TO-220F
Features
- VDSS=250V, ID=5.5A
- RDS(ON) ≤ 0.45 Ω @ VGS=10V
Pin Configuration
1: Gate 2: Drain 3: Source TO-220F
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Rev. A/PQ Page 1 of 10
SAMSUNG
Absolute Maximum Ratings
Symbol
Description
VDSS VDGR VGS
ID ID IDM IGM EAS IAS
Drain-Source Voltage (1)
Drain-Gate Voltage (RGS =1.0MΩ) (1)
Gate-Source Voltage Drain Current
- Continuous Tc=25°C Drain Current
- Continuous Tc=100°C Drain Current
- Pulsed (2) Gate Current
- Pulsed Single Pulsed Avalanche Energy (3) Avalanche...
