IRFS634 Overview
Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220F.
IRFS634 Key Features
- VDSS=250V, ID=5.5A
- RDS(ON) ≤ 0.45 Ω @ VGS=10V


