MBR1050 Overview
Description
MBR1035 MBR1045 MBR1050 MBR1060 Unit Conditions VRRM VDC Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage 35 45 50 60 V 35 45 50 60 V IF(AV) Maximum Average Forward Rectified Current IFSM Peak Forward Surge Current per leg TJ Operating Junction Temperature Range 10 150 -65 to +150 A See Fig.1 8.3ms single half sine- A wave superimposed on rated load (JEDEC method) °C TSTG Storage Temperature Range -65 to +150 °C TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800)-247-2232 Fax: (800)-TAITFA (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2007-10-26 Page 1 of 4 10A Schottky Barrier Rectifier MBR1035 - MBR1060 Symbol Description MBR1035 MBR1045 MBR1050 MBR1060 Unit VF Maximum Instantaneous Forward Voltage per leg (Note 1) 0.57 0.80 0.70 IR Rθ-JC Maximum Instantaneous Reverse Current at rated DC Blocking Voltage Maximum 0.10 15 2.0 Note 1: Pulse test: 300 µs pulse width, 1 % duty cycle V mA ° C/W Conditions IF=10A Tc=25 °C IF=10A Tc=125 °C Tc=25.
Key Features
- Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency
- Guarding for over voltage protection
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
