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MJD122 - SMD Darlington Power Transistor

General Description

MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resistance from Junction

Key Features

  • Designed for general purpose amplifier and low speed switching.

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Datasheet Details

Part number MJD122
Manufacturer TAITRON
File Size 212.04 KB
Description SMD Darlington Power Transistor
Datasheet download datasheet MJD122 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Darlington Power Transistor (NPN) MJD122 SMD Darlington Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resistance from Junction to Case Operating and Storage Junction Temperature Range 6.