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TIS4D28QES - SMD Shielded Wire Wound Power Inductor

General Description

L Inductance DCR IDC Top Tstg DC Resistance (max.) Rated DC Current (max.) (Note) Operating Temperature Storage Temperature Note: Lower inductance by 35% Value 0.68 ~ 180 20 ~ 1900 0.22 ~ 3.1 -40 to 125 -40 to 125 Unit Conditions µH 100KHz, 250mV, 25°C mΩ 25°C A 100KHz, 250mV °C - °C ww

Key Features

  • Magnetically shielded construction.
  • Compact and thin.
  • Large current and low DCR.
  • RoHS Compliant RC0201 RC0201 RC0201.

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Datasheet Details

Part number TIS4D28QES
Manufacturer TAITRON
File Size 426.12 KB
Description SMD Shielded Wire Wound Power Inductor
Datasheet download datasheet TIS4D28QES Datasheet

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SMD Shielded Wire Wound Power Inductor TIS4D28QES Series SMD Shielded Wire Wound Power Inductor Features  Magnetically shielded construction  Compact and thin  Large current and low DCR  RoHS Compliant RC0201 RC0201 RC0201 Applications  DC-DC converter of portable equipment  Camcorder, LCD television set, digital camera, notebook Dimensions (Top View) (Side View) (Bottom View) A Max. B Max. C Max. D Typ. E Typ. F Typ. G Max. 5.0 5.0 3.1 4.5 4.5 1.5 6.9 (Pad Layout) Unit: mm H Typ. I Typ. J Typ. 5.3 1.9 1.5 TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 Circuit SMD Shielded Wire Wound Power Inductor TIS4D28QES Series Material NO.