Download Z2SMB16B Datasheet PDF
Z2SMB16B page 2
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Z2SMB16B page 3
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Z2SMB16B Description

Peak Pulse Power Dissipation on TA=50°C Derate above 70°C IFSM Peak Forward Surge Current TJ,TSTG Operating Junction and Storage Temperature Range Note: Mounted on 5.0mm² (.013mm thick) land areas. Value 2.0 24 15 -55 to 150 Unit Conditions W Note mW/° C A °C 8.3ms single half sinewave superimposed on rated load (JEDEC Method) TAITRON PONENTS INCORPORATED .taitronponents.

Z2SMB16B Key Features

  • Low profile package
  • Built-in strain relief
  • Low inductance
  • plete voltage range 6.8 to 51V
  • Typical ID less than 1.0µA above 11V
  • High temperature soldering guaranteed: 260°C/10 seconds at terminals
  • Low leakage current
  • RoHS pliant
  • 55 to 150
  • Z2SMB51B