TFF10N60 - N-Channel Power MOSFET

Datasheet Summary

Description

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

Robust high voltage termination.
Avalanche energy specified.
Diode is characterized for use in bridge circuits.
Source to Drain diode recovery time comparable to a discrete fast recovery diode.

TAK CHEONG

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Datasheet Details

Part number	TFF10N60
Manufacturer	TAK CHEONG
File Size	2.77 MB
Description	N-Channel Power MOSFET
Datasheet	TFF10N60 Datasheet
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TFF10N60 ® TAK CHEONG N-Channel Power MOSFET 10A, 600V, 0.75Ω GENERAL DESCRIPTION The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology. FEATURES ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge circuits ● Source to Drain diode recovery time comparable to a discrete fast recovery diode.

Published: Mar 18, 2015 |