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TECH MOS Technology. N-Channel High Density Trench MOSFET
TM2314FN
PRODUCT SUMMARY
VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
D
SOT-23-3L
D S G S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation
a a a
Symbol
VDS VGS ID IDM IS PD TJ,TSTG
Limit
20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150
Unit
V V A A A W °C
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
Note a.
TM2314FN Datasheet
