TM2314FN
TM2314FN is N-Channel High Density Trench MOSFET manufactured by TECH MOS.
FEATURES
- Super high dense cell trench design for low RDS(on).
- Rugged and reliable.
- Surface Mount package.
SOT-23-3L
D S G S G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a
Symbol
VDS VGS ID IDM IS PD TJ,TSTG
Limit
20 ± 12 5.4 21.5 1.7 1.25 0.75
- 55 to 150
Unit
V V A A A W °C
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
Note a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse width limited by maximum junction temperature. a
Rth JA
°C/W
：
DS-TM2314FN-01 Apr. , 2006
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Parameter OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS b
Symbol
Condition
Min Typc Max Unit
VGS = 0V , ID = 250u A VDS = 20V , VGS = 0V VGS = 12V , VDS = 0V
20 1 100
V u A n A
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID = 250u A VGS = 4.5V , ID =...
