TECH MOS TM4953S
Dual P-Channel High Density Trench MOSFET
| Part No. | TM4953S |
|---|---|
| Datasheet | TM4953S Download |
| Manufacturer | TECH MOS |
| Description | Dual P-Channel High Density Trench MOSFET |
| Buy | Stock & Price |
FEATURES
●Super high dense cell trench design for low RDS(on).●Rugged and reliable.
●Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ± 20 - 4.9 - 20 - 1.7 2.0 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note ：a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . RthJA 62.5 °C/W DS-TM4953FS-02 Apr. , 2007 1 TM4953S TM4953FS(Pb-free)ELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = -250uA -30 V Zero Gate Voltage Drain Current IDSS...
