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TM4953S - Dual P-Channel High Density Trench MOSFET

Features

  • Super high dense cell trench design for low RDS(on).
  • Rugged and reliable.
  • Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2.

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Datasheet Details

Part number TM4953S
Manufacturer TECH MOS
File Size 141.60 KB
Description Dual P-Channel High Density Trench MOSFET
Datasheet download datasheet TM4953S Datasheet

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Other Datasheets by TECH MOS

Part Number Description
TM4953FS Dual P-Channel High Density Trench MOSFET

Full PDF Text Transcription

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TECH MOS Technology. Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.9A - 3.6A 53 @ VGS = - 10V 95 @ VGS = - 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ± 20 - 4.9 - 20 - 1.7 2.
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