SI170DC25 Description
Ø0.3 Dimensions in inches (mm) Weight:.
SI170DC25 Key Features
- Latest generation of High Voltage IGBT Technology
- Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient
- Ultra low output leakage current
- Low control current consumption
- Triggered control input to avoid linear control risks
- Low conducted and radiated disturbances
- teledynerelays. SI Page 1
- http://..co.kr/