Teledyne Technologies TD99102
The TD99102 is an integrated high-speed driver designed to control the gates of external power devices such as enhancement mode gallium nitride (GaN) High Electron Mobility Transistor (HEMT) and power MOSFETs. The outputs of the TD99102 are capable of providing switching transition speeds in the subnanosecond range for switching applications up to 20 MHz. The TD99102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth.| Part No. | TD99102 |
|---|---|
| Datasheet | TD99102 Download |
| Manufacturer |  Teledyne Technologies |
| Description | High-speed FET and GaN Transistor Driver |
| Buy | Stock & Price |
FEATURES
● TID = 100 krad(Si)● SEL Immune
● High- and Low-side FET drivers
● Dead-time control
● Fast propagation delay, 9 ns
● Tri-state enable mode
● Sub-nanosecond rise and fall time
● 2 A / 4 A peak source/sink current
● Bumped flip chip die
APPLICATIONS
● dc–dc conversions● ac–dc conversions
● Orbital Point of Load (POL) module power distribution
● Motor driver Product
DESCRIPTION
High switching speeds result in smaller peripheral components and enable innovative designs for high reliability orbital motor driver and POL applications. The TD99102 is available as a bumped flip chip die to enable minimum design footprint required for high speed switching power applications. The TD99102 is manufactured on Peregrine’s UltraCMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology, offering the performance of GaAs with the economy and integration of conventional CMOS. Figure 1● Functional Diagram TD99102 Information contained herein is classified as EAR99 under the U.S.
