TDG650E30BSP Description
The TDG650E30BSP is an enhancement mode GaN-onsilicon power transistor based on GaN Systems Technology. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. Teledyne e2v implements patented Island Technology® cell layout for high current performance and yield.
TDG650E30BSP Key Features
- 650 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 50 mΩ
- IDS(max) = 30 A
- Ultra-low FOM Island Technology® die
- Low inductance GaNPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10V)
- Very high switching frequency (> 100 MHz)
- Fast and controllable fall and rise times