TDG650E30BSP
Features
- 650 V enhancement mode power transistor
- Bottom-side cooled configuration
- RDS(on) = 50 mΩ
- IDS(max) = 30 A
- Ultra-low FOM Island Technology® die
- Low inductance Ga NPX® package
- Easy gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10V)
- Very high switching frequency (> 100 MHz)
- Fast and controllable fall and rise times
- Reverse current capability
- Zero reverse recoveryloss
- Small 7.1 x 8.5 mm2 PCB footprint
- Source Sense (SS) pin for optimized gatedrive
- Ro HS 6 pliant
- Class one / Level one Production Screening
- Lot Acceptance Test options available
Package Outline
Circuit Symbol
Applications
- High efficiency power conversion
- High density power conversion
- ac-dc Converters
- Bridgeless Totem Pole PFC
- ZVS Phase Shifted Full Bridge
- Half & Full Bridge topologies
- Synchronous Buck or Boost
- Uninterruptable Power Supplies
- Space Motor Drives
- Solar and Wind Power
- Fast Battery Charging
- On Board Battery Chargers
-...
