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TDG650E30BSP - Bottom-side cooled 650 V E-mode GaN transistor

Description

The TDG650E30BSP is an enhancement mode GaN-onsilicon power transistor based on GaN Systems Technology.

The properties of GaN allow for high current, high voltage breakdown and high switching frequency.

Features

  • 650 V enhancement mode power transistor.
  • Bottom-side cooled configuration.
  • RDS(on) = 50 mΩ.
  • IDS(max) = 30 A.
  • Ultra-low FOM Island Technology® die.
  • Low inductance GaNPX® package.
  • Easy gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10V).
  • Very high switching frequency (> 100 MHz).
  • Fast and controllable fall and rise times.
  • Reverse current capability.
  • Zero rever.

📥 Download Datasheet

Datasheet Details

Part number TDG650E30BSP
Manufacturer TELEDYNE
File Size 1.52 MB
Description Bottom-side cooled 650 V E-mode GaN transistor
Datasheet download datasheet TDG650E30BSP Datasheet

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Full PDF Text Transcription

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TDG650E30BSP Bottom-side cooled 650 V E-mode GaN transistor Product Specification Features • 650 V enhancement mode power transistor • Bottom-side cooled configuration • RDS(on) = 50 mΩ • IDS(max) = 30 A • Ultra-low FOM Island Technology® die • Low inductance GaNPX® package • Easy gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10V) • Very high switching frequency (> 100 MHz) • Fast and controllable fall and rise times • Reverse current capability • Zero reverse recoveryloss • Small 7.1 x 8.
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