1N4148T Datasheet | TEMIC Semiconductors

Features D Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation p Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV PV Tj Tstg Value 100 75 2 500 300 150 440 500 200 - 65...+200 Unit V V A m A m A m A m W m W °C °C tp=1ms VR=0 l=4mm, TL=45°C l=4mm, TL 25°C x Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol Rth JA Value 350 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 12-Dec-94 1 (4) 1N4148.1N4448 Characteristics Tj = 25_C Parameter Forward voltage g Test Conditions IF=5m A IF=10m A IF=100m A VR=20 V VR=20 V, Tj=150 °C VR=75 V IR=100m A, tp/T=0.01, tp=0.3ms VR=0, f=1MHz, VHF=50m V VHF=2V, f=100MHz IF=IR=10m A, i R=1m A IF=10m A, VR=6V, i R=0.1x IR, RL=100W Type 1N4448 1N4148 1N4448 Symbol VF VF VF IR IR IR V(BR) CD Min 0.62 Typ Max 0.72 1 1 25 50 5 Unit V V V n A m A m A V p F % ns ns Reverse current Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery y time 100 4 45 8 4 hr trr trr Typical Characteristics (Tj = 25_C unless otherwise specified) 1.2 VF - Forward Voltage ( V ) IF = 100 m A IF - Forward Current ( m A ) 1.0 0.8 10 m A 0.6 0.4 0.1 m A 0.2 0 - 30 94 9169 1000 1 N 4148 100 Scattering Limit 10 1 m A 1 Tj = 25°C 0 0.4 0.8 1.2 1.6 2.0 0.1 0 30 60 90 120 94 9170 Tj - Junction Temperature ( °C ) - Forward Voltage ( V ) Figure 1. Forward Voltage vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 2...