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BZT55C18 - Silicon Epitaxial Planar Z-Diodes

Datasheet Summary

Features

  • D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances.

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Datasheet Details

Part number BZT55C18
Manufacturer TEMIC Semiconductors
File Size 82.80 KB
Description Silicon Epitaxial Planar Z-Diodes
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Full PDF Text Transcription

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TELEFUNKEN Semiconductors BZT55C... Silicon Epitaxial Planar Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Very high stability D Low noise D Available with tighter tolerances Applications Voltage stabilization 94 9373 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJAx300K/W Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Rev. A1: 12.12.1994 1 BZT55C... Type BZT55C...
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