SUB65P06-20 - P-Channel Enhancement-Mode Transistors

TEMIC Semiconductors

Datasheet Details

Part number	SUB65P06-20
Manufacturer	TEMIC Semiconductors
File Size	99.16 KB
Description	P-Channel Enhancement-Mode Transistors
Datasheet	SUB65P06-20 Datasheet
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www.DataSheet4U.com SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) –60 TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB65P06Ć20 D PĆChannel MOSFET rDS(on) (W) 0.020 ID (A) –65a S GD S Top View SUP65P06Ć20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) www.DataSheet4U.com Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR Limit "20 –65a –39 –200 –60 180 187d Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c A EAR PD TJ, Tstg mJ W 3.

Published: Jun 22, 2006 |