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TSSP4400 - GaAs/GaAlAs Infrared Emitting Diode

General Description

TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue

grey tinted plastic package with spherical side view lens.

The device is spectrally matched to silicon photodiodes and phototransistors.

Key Features

  • D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 925 nm D High reliability 94 8491.

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TSSP4400 GaAs/GaAlAs Infrared Emitting Diode in Sideview Package Description TSSP4400 is a high intensity infrared emitting diode in GaAlAs on GaAs technology, molded in a clear, blue– grey tinted plastic package with spherical side view lens. The device is spectrally matched to silicon photodiodes and phototransistors. www.DataSheet4U.com Features D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 925 nm D High reliability 94 8491 Applications High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors.