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TEMIC
Siliconix
2N7227JANTX/JANTXV
N-Channel Enhancement-Mode Transistors
Product Summary
VDS(V)
400
rDS(on) (Q) 0.415
ID (A) 14
Parametnc ltmits in accordance with MIL-S-J9500/592 where applicable.
TO-254AA Hermetic Package
o
Case Isolated
DSG ThpVlew
D
G~
S N·Channel MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current (TJ = 150°C)
Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
lTC = 25°C ITc = 100°C
ITc = 25°C
Symbol VDS VGS
ID
IDM IAR PD TJ.T,lg
limit
Unit
400 V
±20
14
9 A
56
14
150
W
-55 to 150
°C
Thermal Resistance Ratings
Parameter Maximum lunction4o-Case
Symbol RthJC
limit 0.
2N7227JANTX Datasheet
