TEMIC Semiconductors BA604
Silicon Planar Diode
APPLICATIONS
General purpose BA604 94 9371ABSOLUTE MAXIMUM RATINGS
Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms Type Symbol Value Unit VRSM 80 V VR 50 V IFSM IFRM 2 A 450 mA IF 200 mA PV 500 mW Tj 175 °C Tstg –55...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction lead Junction ambient Test Conditions Symbol Value Unit TL=constant on PC board 50mmx50mmx1.6mm RthJL RthJA 350 K/W 500 K/W TELEFUNKEN Semiconductors 1 (3) Rev. A2, 24-Jun-96 BA604 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Breakdown voltage Reverse recovery time Diode capacitance Test Conditions IF=50mA VR=50V VR=20V VR=20V, Tj=150°C IR=100mA IF=10mA, IR=10mA, iR=1mA VR=0, f=1MHz Type Symbol Min Typ Max Unit VF IR IR IR V(BR) 80 trr 1.1 V 1 mA 50 nA 50 mA V 20 ns CD 4 pF Dimensions in mm 2 (3) 96 12070 TELEFUNKEN Semiconductors Rev.