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Silicon Planar Diode
Applications
General purpose
BA604
94 9371
Absolute Maximum Ratings
Tj = 25_C
Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation Junction temperature Storage temperature range
Test Conditions tp=1ms
Type
Symbol
Value
Unit
VRSM
80
V
VR
50
V
IFSM IFRM
2
A
450
mA
IF
200
mA
PV
500
mW
Tj
175
°C
Tstg
–55...+175
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter Junction lead Junction ambient
Test Conditions
Symbol
Value
Unit
TL=constant on PC board 50mmx50mmx1.6mm
RthJL RthJA
350
K/W
500
K/W
TELEFUNKEN Semiconductors
1 (3)
Rev.
BA604 Datasheet
