TEMIC Semiconductors BFQ65
Silicon NPN Planar RF Transistor
- Max Operating Temp : 175°C
Source:
Octopart
| Part No. | BFQ65 |
|---|---|
| Datasheet | BFQ65 Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | Silicon NPN Planar RF Transistor |
| Buy | Stock & Price |
APPLICATIONS
RF-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling.FEATURES
D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = BaseABSOLUTE MAXIMUM RATINGS
Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 10 2.5 50 300 150 –65 to +150 Unit V V V mA mW °C °C Symbol RthJA Maximum 300 Unit K/W 1 (5) BFQ65 Electrical DC Characteristics Tamb = 25°C Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = C Collector-base cut-off current VCB = 1...
