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BFQ65 - Silicon NPN Planar RF Transistor

Key Features

  • D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu.

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Datasheet Details

Part number BFQ65
Manufacturer TEMIC
File Size 62.37 KB
Description Silicon NPN Planar RF Transistor
Datasheet download datasheet BFQ65 Datasheet

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BFQ65 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. Features D High power gain D Low noise figures D High transition frequence 3 2 94 9308 1 Marking: BFQ 65 Plastic case (TO 50) 1 = Collector; 2 = Emitter; 3 = Base Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev.