TEMIC Semiconductors BFR90A
Silicon NPN Planar RF Transistor
APPLICATIONS
RF-amplifier up to GHz range specially for wide band antenna amplifier.FEATURES
D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90A Marking: BFR90A Plastic case (TO 50) 1= Collector; 2= Emitter; 3= BaseABSOLUTE MAXIMUM RATINGS
Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 15 2 30 300 150 –65 to +150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 mm Cu Symbol RthJA Value 300 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (6) BFR90A Electrical DC Characteristics Tj = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current VCE = 20 V, VBE = 0 Collector-base cut-off current VCB = 15 V, IE = 0 Emitter-base cut-off current...