BFS17R Datasheet PDF

APPLICATIONS

For broadband amplifiers up to 1 GHz.

FEATURES

D High power gain D SMD-package 1 BFS17/BFS17R 1 23 94 9280 BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter

ABSOLUTE MAXIMUM RATINGS

Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Tamb ≤ 60°C Storage temperature range Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu 32 95 10527 BFS17R Marking: E4 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 –55 to +150 Unit V V V mA mW °C °C Symbol RthJA Value 450 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (5) BFS17/BFS17R Electrical DC Characteristics Tamb = 25°C Parameters / Test Conditions Collector-emitter cut-off current VCE = 25 V, VBE = 0 Co