TEMIC Semiconductors BUF636A
Silicon NPN High Voltage Switching Transistor
| Part No. | BUF636A |
|---|---|
| Datasheet | BUF636A Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | Silicon NPN High Voltage Switching Transistor |
| Buy | Stock & Price |
FEATURES
D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283APPLICATIONS
Electronic lamp ballast circuits Switch-mode power suppliesABSOLUTE MAXIMUM RATINGS
Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 450 550 1000 11 5 7.5 2.5 4 50 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.5 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 26-Sep-97 1 (8) BUF636AELECTRICAL CHARACTERISTICS
Tcase = 25°C...
