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BUF646A - Silicon NPN Transistor

Download the BUF646A datasheet PDF. This datasheet also covers the BUF646 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 95 9630.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BUF646-TEMIC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BUF642 Silicon NPN High Voltage Switching Transistor Vishay Siliconix
BUF644 Silicon NPN High Voltage Switching Transistor Vishay Siliconix
BUF600 HIGH-SPEED BUFFER AMPLIFIER Burr-Brown Corporation
BUF601 HIGH-SPEED BUFFER AMPLIFIER Burr-Brown Corporation
BUF602 Closed-Loop Buffer Texas Instruments

Other Datasheets by TEMIC Semiconductors (now Microchip)

Part Number Description
BUF646 Silicon NPN Transistor
BUF672 Silicon NPN High Voltage Switching Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TELEFUNKEN Semiconductors BUF646 • BUF646A Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 95 9630 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage Test Conditions Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range xTcase 25°C Type BUF646 BUF646A BUF646 BUF646A Symbol VCEO VCEO VCES VCES VEBO IC ICM I