TEMIC Semiconductors BUF650
Silicon NPN High Voltage Switching Transistor
FEATURES
D Simple-sWitch-Off Transistor (SWOT) D HIGH SPEED technology D Planar passivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature D Optimized RBSOA D High reverse voltage 14283APPLICATIONS
Electronic lamp ballast circuits Switch-mode power suppliesABSOLUTE MAXIMUM RATINGS
Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 10 15 5 7.5 70 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 1.78 Unit K/W TELEFUNKEN Semiconductors Rev. C2, 18-Jul-97 1 (8) BUF650ELECTRICAL CHARACTERISTICS
Tcase = 25°C,...