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BYW55 Datasheet PDF

TEMIC Semiconductors BYW55

Silicon Mesa Rectifiers

Part No. BYW55
Datasheet BYW55 Download
Manufacturer
TEMIC Semiconductors
Description Silicon Mesa Rectifiers
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BYW55 datasheet page 1 preview

FEATURES

D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060 BYW54 – 1N5061 BYW55 – 1N5062

APPLICATIONS

Rectifier, general purpose 94 9539

ABSOLUTE MAXIMUM RATINGS

Tj = 25_C Parameter Test Conditions Reverse voltage, repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Max. pulse energy in the avalanche mode, non repetitive (inductive load switch off) i2* t–rating Junction temperature Storage temperature range tp=10ms ϕ=180° tp=20ms half sinus wave, Tj=175°C I(BR)R=1A, Tj=175°C Type BYW52 BYW53 BYW54 BYW55 BYW56 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV PR ER Value 200 400 600 800 1000 50 12 2 1000 20 Unit V V V V V A A A W mWs i2*t 8 A2*s Tj 175 °C Tstg –55...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junctio...
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