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CNY75B - Optocoupler

Download the CNY75B datasheet PDF. This datasheet also covers the CNY75 variant, as both devices belong to the same optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

Key Features

  • According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D Further approvals: BS 415, BS 7002, SETI: IEC 950, UL 1577: Fil.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CNY75-TEMIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CNY75B
Manufacturer TEMIC
File Size 136.37 KB
Description Optocoupler
Datasheet download datasheet CNY75B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CNY75(G) Series Optocoupler with Phototransistor Output Order Nos. and Classification table is on sheet 2. Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.