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Silicon Epitaxial Planar Diode
LS4150
Features
D Electrical data identical with the device 1N4150 D Quadro Melf package
Applications
High speed switch and general purpose use in computer and industrial applications
96 12009
Absolute Maximum Ratings
Tj = 25_C
Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range
Test Conditions
tp=1ms VR=0
Type
Symbol
Value
Unit
VRRM VR IFSM IF IFAV PV Tj Tstg
50
V
50
V
4
A
600
mA
300
mA
500
mW
175
°C
–65...+175
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter Junction ambient
Test Conditions
Symbol
Value
Unit
on PC board 50mmx50mmx1.
LS4150 Datasheet
