LS4150 - Silicon Epitaxial Planar Diode

Features

D Electrical data identical with the device 1N4150 D Quadro Melf package.

TEMIC

Datasheet Details

Part number	LS4150
Manufacturer	TEMIC
File Size	64.74 KB
Description	Silicon Epitaxial Planar Diode
Datasheet	LS4150 Datasheet
Additional preview pages of the LS4150 datasheet.

📁 Similar Datasheet

LS4150 - FAST SWITCHING SURFACE MOUNT DIODES (PANJIT)
LS4150 - SURFACE MOUNT FAST SWITCHING DIODES (Sunmate)
LS4150 - Small Signal Fast Switching Diode (Vishay)
LS4151 - SURFACE MOUNT FAST SWITCHING DIODE (DIODES)
LS4151 - SURFACE MOUNT FAST SWITCHING DIODE (Sunmate)
LS4151 - Small Signal Fast Switching Diode (Vishay)
LS4154 - SURFACE MOUNT FAST SWITCHING DIODE (Sunmate)
LS4154 - Small Signal Fast Switching Diode (Vishay)
LS410860 - Single Diode Isolated Module (Powerex Power Semiconductors)
LS411060 - Single Diode Isolated Module (Powerex Power Semiconductors)

Other Datasheets by TEMIC

LS4148 - Silicon Epitaxial Planar Diodes
LS4448 - Silicon Epitaxial Planar Diodes

Full PDF Text Transcription

Click to expand full text

Silicon Epitaxial Planar Diode LS4150 Features D Electrical data identical with the device 1N4150 D Quadro Melf package Applications High speed switch and general purpose use in computer and industrial applications 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms VR=0 Type Symbol Value Unit VRRM VR IFSM IF IFAV PV Tj Tstg 50 V 50 V 4 A 600 mA 300 mA 500 mW 175 °C –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mmx50mmx1.

Published: Sep 13, 2025 |