• Part: LS4150
  • Description: Silicon Epitaxial Planar Diode
  • Category: Diode
  • Manufacturer: TEMIC Semiconductors
  • Size: 64.74 KB
Download LS4150 Datasheet PDF
TEMIC Semiconductors
LS4150
Features D Electrical data identical with the device 1N4150 D Quadro Melf package Applications High speed switch and general purpose use in puter and industrial applications 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms VR=0 Type Symbol Value Unit VRRM VR IFSM IF IFAV PV Tj Tstg 600 m A 300 m A 500 m W °C - 65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mmx50mmx1.6mm Rth JA K/W TELEFUNKEN Semiconductors 1 (4) Rev. A2, 24-Jun-96 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time Test...