TEMIC Semiconductors LS4150
Silicon Epitaxial Planar Diode
| Part No. | LS4150 |
|---|---|
| Datasheet | LS4150 Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | Silicon Epitaxial Planar Diode |
| Buy | Stock & Price |
FEATURES
D Electrical data identical with the device 1N4150 D Quadro Melf packageAPPLICATIONS
High speed switch and general purpose use in computer and industrial applications 96 12009ABSOLUTE MAXIMUM RATINGS
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms VR=0 Type Symbol Value Unit VRRM VR IFSM IF IFAV PV Tj Tstg 50 V 50 V 4 A 600 mA 300 mA 500 mW 175 °C –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions Symbol Value Unit on PC board 50mmx50mmx1.6mm RthJA 500 K/W TELEFUNKEN Semiconductors 1 (4) Rev. A2, 24-Jun-96 LS4150 Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time Test Conditions IF=1mA IF=10mA IF=50mA IF=100mA IF=200mA VR=50V VR=50V, Tj=150°C VR=0, f=1MHz, VHF=50mV W IF=IR=10...100mA, iR=0.1xIR, RL=100 Ty...
