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Silicon Epitaxial Planar Diode
MCL4151
Features
D Electrical data identical with the device 1N4151 D Micro Melf package
Applications
Extreme fast switches
96 12315
Absolute Maximum Ratings
Tj = 25_C
Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range
Test Conditions tp=1ms VR=0
Type
Maximum Thermal Resistance
Tj = 25_C
Parameter Junction ambient
Test Conditions
mounted on epoxy–glass hard issue, Fig. 1, 35mm copper clad, 0.9 mm2 copper area per electrode
Symbol
Value
Unit
VRRM
75
V
VR
50
V
IFSM IFRM
2
A
450
mA
IF
200
mA
IFAV
150
mA
PV
500
mW
Tj
175
°C
Tstg
–65...