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MCL4151 - Silicon Epitaxial Planar Diode

Key Features

  • D Electrical data identical with the device 1N4151 D Micro Melf package.

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Datasheet Details

Part number MCL4151
Manufacturer TEMIC
File Size 66.74 KB
Description Silicon Epitaxial Planar Diode
Datasheet download datasheet MCL4151 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Epitaxial Planar Diode MCL4151 Features D Electrical data identical with the device 1N4151 D Micro Melf package Applications Extreme fast switches 96 12315 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions tp=1ms VR=0 Type Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy–glass hard issue, Fig. 1, 35mm copper clad, 0.9 mm2 copper area per electrode Symbol Value Unit VRRM 75 V VR 50 V IFSM IFRM 2 A 450 mA IF 200 mA IFAV 150 mA PV 500 mW Tj 175 °C Tstg –65...