TEMIC Semiconductors MOD100B
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150●C) Pulsed Drain Current Avalanche Current (See Thermal Ratings) Maximum Power Dissipation Operating Junction and Storage 'Thmperature Range Isolation Voltage ITc=2S●C ITc = 100●C I Tc=2SoC ITc = 100●C Symbol VDS VGS ID IDM IA Pn Tl. Tstg VISOL Single Die .All Die 100 100 ±20 ±20 21 84 21 70 125 440 21 150 400 60 100 -55 to 150 1000 Unit V A W °C V Thermal Resistance Ratings Parameter Maximum Junction●to-Ambient Maximum Junction-ta-Case Case-ta-Sink Symbol RthIA RthJC RthCS P-36734-Rev. D (05/30/94) 'JYpieal 0.1 SinglcDlc 30 0.83 .All Die 30 0.31 Unit 0C;W 6-53 TEMIC MODIOOB/IOOC Specifications (TJ = 25°C Unless Otherwise Noted) Siliconix Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Symbol V(BR)DSS VOS(th) loss ZeIO Gate Voltage Drain CUrrent On-State Drain Current" IDSS ID(on) Drain-Source On-State Re...