TEMIC Semiconductors MOD200C
N-Channel MOSFET
| Part No. | MOD200C |
|---|---|
| Datasheet | MOD200C Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150'C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operatmg Junction and Storage 'Thmperature Range Isolation Voltage I Tc=25'C ITc= 100'C ITc= 25'C ITc= 100'C Symbol VDS Vas ID IDM IA PD TJ. 'f,tg VISOL Single Die All Die 200 200 ±20 ±20 21 84 17 56 100 360 21 150 400 60 100 -55 to 150 1000 Unit V A W 'C V Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case Case-to-Sink Symbol RthJA RthJC RthCS P-36737-Rev. D (05/30/94) Typical 0.1 Single Die 30 0.83 All Die 30 0.31 Unit 'C/W 6-57 TEMIC MOD200B/200C = Specifications (TJ 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = Ov, 10 = 250 JlA 200 Gate Threshold Voltage VOS(th) Vos - Vos. 10 - 250 rnA 2.0 Gate-Body Leakage loss Vos=OV,Vos= ±20V Zero Gate Voltage Drain Current Vo...
