TEMIC Semiconductors MOD500C
N-Channel MOSFET
| Part No. | MOD500C |
|---|---|
| Datasheet | MOD500C Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ ~ 150'C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Thmperature Range Isolation Voltage ITc~25'C I Tc ~ 100'C ITc~25'C I Tc ~ 100'C Symbol Vns VGS In IDM IA Pn TJ,Tstg VISOL Single Die All Die 500 500 ±20 ±20 13 41 8 26 52 164 13 150 400 60 100 -55 to 150 1000 Unit V A W 'C V Thermal Resistance Ratings Parameter Maximum Junction-ta-Ambient Maximum Junction-to-Case Case-to-Sink Symb(ll RthJA RthJC RthCS P-36734-Rev. C (05130/94) Typical 01 Single Die 30 0.83 All Die 30 0.31 Unit 'C{W 6-65 TEMIC MOD500B/500C Siliconix Specifications (TJ = 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS Vos = ov, In = 250 f1A 500 Gate Threshold Voltage VOS(tb) Vns = Vos, In = 250 mA 2.0 Gate-Body Leakage loss Vns = OV,Vos = ±20V Zero Gate Voltage Drain Cu...
