FEATURES
D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode Benefits D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation APPLICATIONS
D Fast Analog Switch D Fast Sample-and-Holds D Pixel-Rate Switching D DAC Deglitchers D High-Speed Driver DESCRIPTION
These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability. For similar products see: quad array—SD5000/5400 series and non-Zener protection—SD210DE/214DE. TO-206AF (TO-72) S 1 Body Substrate 4 (Case) TOĆ253 (SOTĆ143) Body Substrate 1 4G 2 D 3 G Top View SD211DE, SD213DE, SD215DE S2 3D Top View SST211 (D1)*, SST213 (D3)*, SST215 (D5)* *Marking Code for TOĆ253 Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600.
TEMIC Semiconductors
