TEMIC Semiconductors SUB65P06-20
P-Channel Enhancement-Mode Transistors
| Part No. | SUB65P06-20 |
|---|---|
| Datasheet | SUB65P06-20 Download |
| Manufacturer |  TEMIC Semiconductors |
| Description | P-Channel Enhancement-Mode Transistors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = 25_C Unless Otherwise Noted) Parameter Symbol VGS TC = 25_C TC = 125_C ID IDM IAR Limit "20 –65a –39 –200 –60 180 187d Unit V Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 125_C (TO-263)c A EAR PD TJ, Tstg mJ W 3.7 –55 to 175 _C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Parameter PCB Mount (TO-263)c Junction-to-Ambient Junction to Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70289. A SPICE Model data sheet is available for this product (FaxBack document #70543). RthJA RthJC 62.5 0.8 Symbol RthJA Limit 40 Unit _C/W Siliconix P-39628—Rev.
