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Si8956AZ-883 - N-Channel MOSFET

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Part number Si8956AZ-883
Manufacturer TEMIC
File Size 190.73 KB
Description N-Channel MOSFET
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    TEMIC Siliconix Si8956AZ/883 Quad N-Channel Enhancement-Mode MOSFET Product Summary Vos(V) rOS(on) (Q) O.l@VGs=lOV 20 0.2 @ VGS = 4.5 V LCC-20 SI SI Gl D4 D4 In (A) 5 1 01 54 D1 S4 G2 G4 S2 D3 52 D3 D2 D2 G3 S3 S3 Top View Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current" Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction and Storage Thmperature Range ITA=2S'C .ITA= 100'C ITA=2S'C ITA= 100'C VOS VGS 10 10M Is Po TJ,T.tg 20 V ±20 5 3 A 14 3 3 W 1.3 -55 to 150 ·c Thermal Resistance Ratings Parameter Maximum Junction-la-Case Notes: a. Drain current limited by package construction. P-36673-Rev.
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