Si8956AZ-883 Datasheet | TEMIC Semiconductors

TEMIC Siliconix Si8956AZ/883 Quad N-Channel Enhancement-Mode MOSFET Product Summary Vos(V) r OS(on) (Q) O.l@VGs=l OV 20 0.2 @ VGS = 4.5 V LCC-20 SI SI Gl D4 D4 In (A) 5 1 D1 S4 G2 G4 S2 D3 D3 D2 D2 G3 S3 S3 Top View Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current" Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction and Storage Thmperature Range ITA=2S'C .ITA= 100'C ITA=2S'C ITA= 100'C VOS VGS 10M Is Po TJ,T.tg V ±20 3...