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P-Channel Enhancement-Mode MOSFET
Si9433DY
Product Summary
VDS (V)
rDS(on) (W)
ID (A)
0.065 @ VGS = –4.5 V
"5.4
–20
0.100 @ VGS = –2.7 V
"4.2
Recommended upgrade: Si9424DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6433DQ
SSS
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
G
Top View
DDDD P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
–20 "12 "5.4 "4.4 "10 –2.6 2.5 1.
Si9433DY Datasheet
