TEMIC Semiconductors TE13005D
Silicon NPN High Voltage Switching Transistor
FEATURES
D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planar passivation D Very short switching times D Very low switching losses D Very low dynamic saturation D Very low operating temperature D High reverse voltage 14283APPLICATIONS
Electronic lamp ballast circuits Switch-mode power suppliesABSOLUTE MAXIMUM RATINGS
Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Type TE13004D TE13005D TE13004D TE13005D Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 300 400 600 700 9 6 8 2 4 57 150 –65 to +150 Unit V V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25° C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.2 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 1 (9) TE13004D...