DESCRIPTION
FEATURES
D High radiant power and high radiant intensity D Suitable for high pulse current operation D Low forward voltage D Angle of half intensity ϕ = ± 22° D Peak wavelength l p = 925 nm D High reliability 94 8491 APPLICATIONS
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN photodiodes or phototransistors. Infrared remote control and free air transmission systems for long transmission distance and medium wide angle requirements in combination with PIN photo diodes or photo modules. Suitable as replacement of CQX47. ABSOLUTE MAXIMUM RATINGS
Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.0 170 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W tp/T=0.5, tp=100 m s tp=100 m s t x 5sec, 2 mm from case TELEFUNKEN Semiconductors Rev.
TEMIC Semiconductors
