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40H12K Datasheet

Manufacturer: TGD
40H12K datasheet preview

40H12K Details

Part number 40H12K
Datasheet 40H12K Datasheet PDF (Download)
File Size 1.20 MB
Manufacturer TGD
Description N-Channel Enhancement Mode Power MOSFET
40H12K page 2 40H12K page 3

40H12K Overview

The TGD40H12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

40H12K Key Features

  • VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Load switching
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width

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